PLASMA ETCHING

Reactive ion attachment (RIE) is a dry technology and is used on almost all materials that are used in electronics and optoelectronics. Reactive ion etching (RIE) is a dry technology and is used on almost all materials that are used in electronics and optoelectronics. The substrate or sample is bombarded with charged particles that remove layer by layer from the surface, in a reproducible and anisotropic manner. Reactive ion attachment (RIE) is mainly used for anisotropic structuring of silicon, organic and inorganic dielectric materials, metallic barrier materials, and polymers for electronic and optoelectronic applications.

Substrato di Silicio mascherato con photoresis, prima di effettuare il processo in plasma
Plasma process

Plasma process

Plasma process

To remove silicon or silicon-containing layers, mainly fluorine-based attack gases such as CF4 and SF6 are used. For etching organic molecules or removal of inorganic layers of organic residues, oxygen plasmas or gas mixtures of O2 and CF4 are used. Metallic layers are removed primarily by physical removal generally by argon plasma.

The material on the exposed surface has been removed

The material on the exposed surface has been removed

What we get

Plasma is therefore an excellent means of obtaining:

  • Photoresist removal
  • Silicon etching
  • Etching and surface modification of fluorinated polymers
  • Metal micro etching

Recommended product

FALCON RIE+

Plasma RIE